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| inchange semiconductor isc product specification isc silicon npn power transistor BU103A description continuous collector current-i c = 1a collector power dissipation- : p c = 30w @t c = 25 applications designed for tv vertical applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v cer collector-emitter voltage r be = 220 120 v v ebo emitter-base voltage 8 v i c collector current-continuous 1 a p c collector power dissipation@t c =25 30 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 6.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU103A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cer collector-emitter sustaining voltage i c = 100ma; r be = 220 120 v v ce (sat) -1 collector-emitter saturation voltage i c = 0.2a; i b = 20ma 1.0 v i cbo collector cutoff current v cb = 80v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma h fe dc current gain i c = 0.2a; v ce = 10v 50 200 c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 50 pf f t current gain-bandwidth product i c = 0.1a; v ce = 10v 100 mhz isc website www.iscsemi.cn 2 |
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